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MBR200150CT

GeneSiC Semiconductor

MBR200150CT

Rectifier Diode Array

RoHS: Compliant

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RoHS

Compliant

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Specifications

Diode Type
Schottky
Montaj
Chassis Mount
Tepe Reflow Sıcaklığı (°C)
NOT SPECIFIED
Operating Temperature Junction
-55°C~150°C
Terminal Pozisyonu
UPPER
Voltage Forward Vf Max If
880mV @ 100A
Applications
POWER
Lifecycle Status
PRODUCTION (Last Updated: 5 months ago)
Ambalaj
Bulk
Reverse Currentmax
3000μA
Kurşunsuz Kodu
yes
Operating Temperature Max
150°C
Number Of Phases
1
Current Reverse Leakage Vr
3mA @ 150V
RoHS Durumu
RoHS Compliant
Terminal Sayısı
2
Parça Durumu
Active
Montaj Tipi
Chassis Mount
Diode Configuration
1 Pair Common Cathode
HTS Kodu
8541.10.00.80
Terminal Formu
UNSPECIFIED
ECCN Kodu
EAR99
Average Rectified Current
100A
Number Of Elements
2
Element Configuration
Common Cathode
Kılıf / Paket
Twin Tower
Max Reverse Voltage Dc
150V
Nonrep Pk Forward Currentmax
1500A
Jesd30 Code
R-PUFM-X2
Diode Element Material
SILICON
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Fabrika Tedarik Süresi
6 Weeks
Tepe Reflow Süresi (maks. sn)
NOT SPECIFIED
Nem Hassasiyeti (MSL)
1 (Unlimited)

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