GE2X8MPS06D

Specifications

Technology

SiC

Ambalaj

Tube

RoHS

Details

Kılıf / Paket

TO-247-2

Birim Ağırlık

0.215171 oz

Voltage Dc Reverse Vr Max

650 V

Ifsm Forward Surge Current

56 A

Seri

SiC Schottky MPS

Paket

Tube

Operating Temperature Junction

-55°C ~ 175°C

Tedarikçi Cihaz Paketi

TO-247-3

Diode Configuration

Dual Common Cathode

Diode Type

Silicon Carbide Schottky

Minimum Operating Temperature

- 55 C

Maks. Çalışma Sıcaklığı

+ 175 C

Fabrika Paket Adedi

30

Montaj Tipi

Through Hole

Configuration

Single

Montaj Stili

SMD/SMT

Ir Reverse Current

10 uA

Temel Ürün No

GE2X8

Tip

Schottky Silicon Carbide Diodes

Current Average Rectified Io Per Diode

19A (DC)

Ürün Durumu

Active

Ürün Tipi

Schottky Diodes & Rectifiers

Repetitive Peak Reverse Voltage

650V

If Forward Current

16 A (2 x 8 A)

Vf Forward Voltage

1.25 V

Vrrm Repetitive Reverse Voltage

650 V

Speed

No Recovery Time > 500mA (Io)