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GeneSiC Semiconductor

GD2X60MPS06N

Rectifier Diode Array

RoHS: Compliant

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Compliant

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Specifications

Operating Temperature Junction
-55°C ~ 175°C
Birim Ağırlık
1 oz
RoHS
Details
Technology
SiC
Current Average Rectified Io Per Diode
70A (DC)
Pd Power Dissipation
408 W
Paket
Tube
Ifsm Forward Surge Current
420 A
Montaj Stili
Screw Mount
Current Reverse Leakage Vr
10 μA @ 650 V
Voltage Dc Reverse Vr Max
650 V
Ambalaj
Tube
Ürün Tipi
Schottky Diodes & Rectifiers
Ir Reverse Current
1 uA
Ürün Durumu
Active
Fabrika Paket Adedi
10
Montaj Tipi
Chassis Mount
Voltage Forward Vf Max If
1.8 V @ 60 A
Temel Ürün No
GD2X
Tedarikçi Cihaz Paketi
SOT-227
Kılıf / Paket
SOT-227-4, miniBLOC
Vf Forward Voltage
1.5 V
Maks. Çalışma Sıcaklığı
+ 175 C
Reverse Recovery Time Trr
0 ns
Vrrm Repetitive Reverse Voltage
650 V
Diode Configuration
2 Independent
Minimum Operating Temperature
- 55 C
Speed
No Recovery Time > 500mA (Io)
If Forward Current
120 A
Diode Type
Silicon Carbide Schottky
Configuration
Dual
Vr Reverse Voltage
650 V

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