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FUJITSU Limited

2MBI600VG-170E

Single IGBTs

RoHS: Compliant

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Compliant

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Specifications

Vcesatmax
2.46 V
Power Dissipationmax Abs
4410 W
Package Body Material
PLASTIC/EPOXY
Configuration
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Gateemitter Thr Voltagemax
7 V
Case Connection
ISOLATED
Package Description
MODULE-10
Terminal Pozisyonu
UPPER
Ihs Manufacturer
FUJITSU LTD
Operating Temperaturemax
175 °C
Turnoff Timenom Toff
2070 ns
Gateemitter Voltagemax
20 V
Package Style
FLANGE MOUNT
Jesd30 Code
R-PUFM-X10
Polaritychannel Type
N-CHANNEL
ECCN Kodu
EAR99
Terminal Formu
UNSPECIFIED
Turnon Timenom Ton
2280 ns
Transistor Element Material
SILICON
Package Shape
RECTANGULAR
Yüzey Montaj
NO
Number Of Terminals
10
Collector Currentmax Ic
800 A
Transistor Application
POWER CONTROL
Part Life Cycle Code
Active
Collectoremitter Voltagemax
1700 V
REACH Uyumluluk Kodu
compliant
Number Of Elements
2

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