PSMN2R8-40BS.118

Specifications

Minimum Operating Temperature C

-55

Category

Power MOSFET

Typical Fall Time Ns

23

Maximum Gate Threshold Voltage V

4

Maximum Operating Temperature C

175

Maximum Gate Source Leakage Current Na

100

Typical Turnoff Delay Time Ns

52

Typical Turnon Delay Time Ns

28

Channel Mode

Enhancement

Maximum Gate Source Voltage V

20

Configuration

Single

Eccn Us

EAR99

Svhc Exceeds Threshold

Yes

Parça Durumu

Active

Maximum Drain Source Voltage V

40

Maximum Idss Ua

10

Typical Input Capacitance Vds Pf

4491@20V

Maximum Continuous Drain Current A

100

Ambalaj

Tape and Reel

Maximum Drain Source Resistance Mohm

2.9@10V

Channel Type

N

Typical Rise Time Ns

29

Maximum Power Dissipation Mw

211000

Svhc

Yes

Eu Rohs

Compliant with Exemption

Hts

8541.29.00.95

Typical Gate Charge10v Nc

71

Typical Gate Charge Vgs Nc

71@10V|61@10V

Number Of Elements Per Chip

1