PSMN069-100YS,115

Specifications

Maximum Power Dissipation Mw

56000

Radyasyon Dayanımı

No

Typical Rise Time Ns

7

Fall Time Typ

5 ns

Channel Type

N

Maximum Drain Source Resistance Mohm

72.4@10V

Pin Sayısı

4

Number Of Elements Per Chip

1

Transistor Element Material

SILICON

Direnç

72.4MOhm

Fet Type

N-Channel

Mounting

Surface Mount

Operating Mode

ENHANCEMENT MODE

Nem Hassasiyeti (MSL)

1 (Unlimited)

Transistor Application

SWITCHING

Typical Turnon Delay Time Ns

10

Rds On Max Id Vgs

72.4m Ω @ 5A, 10V

Package Width

4.1(Max)

Tepe Reflow Süresi (maks. sn)

30

Maximum Operating Temperature C

175

Package Height

1.1(Max)

Fabrika Tedarik Süresi

12 Weeks

Typical Fall Time Ns

5

Current Continuous Drain Id25

17A Tc

Case Connection

DRAIN

Turn On Delay Time

10 ns

Typical Input Capacitance Vds Pf

645@50V

Pin Sayısı

5

Parça Durumu

Active

Svhc Exceeds Threshold

Yes

Eccn Us

EAR99

Maximum Gate Source Voltage V

20

Configuration

Single Triple Source

Channel Mode

Enhancement

Automotive

No

RoHS Durumu

ROHS3 Compliant

Çalışma Sıcaklığı

-55°C~175°C TJ

Ambalaj

Tape and Reel

Maximum Continuous Drain Current A

17

Gate To Source Voltage Vgs

20V