PMV30UN2R

Specifications

Transistor Element Material

SILICON

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Current Continuous Drain Id25

4.2A Ta

Typical Turnon Delay Time Ns

7

Typical Gate Charge Vgs Nc

6.2@4.5V

Number Of Channels

1

Pin Sayısı

3

RoHS Durumu

ROHS3 Compliant

Gate Charge Qg Max Vgs

11nC @ 4.5V

Lead Shape

Gull-wing

Ambient Temperature Range High

150°C

Ambalaj

Tape and Reel

Standard Package Name

SOT

Eu Rohs

Compliant

Maximum Gate Threshold Voltage V

0.9

Eccn Us

EAR99

Typical Input Capacitance Vds Pf

655@10V

Drive Voltage Max Rds On Min Rds On

1.2V 4.5V

Yayın Yılı

1997

Transistor Application

SWITCHING

Typical Fall Time Ns

10

Number Of Elements

1

Automotive

Unknown

Power Dissipation Max

490mW Ta 5W Tc

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Lead Free

Vgsth Max Id

900mV @ 250μA

Maximum Drain Source Resistance Mohm

32@4.5V

Package Length

3(Max)

Nem Hassasiyeti (MSL)

1 (Unlimited)

Process Technology

TMOS

Category

Power MOSFET

Package Width

1.4(Max)

Rds On Max Id Vgs

32m Ω @ 4.2A, 4.5V

Terminal Pozisyonu

DUAL

Typical Rise Time Ns

26

Maximum Idss Ua

1

Montaj Tipi

Surface Mount

Max Junction Temperature Tj

150°C

Fabrika Tedarik Süresi

4 Weeks