PMV20ENR

Specifications

Maximum Idss Ua

1

Fabrika Tedarik Süresi

4 Weeks

Configuration

Single

Montaj Tipi

Surface Mount

Operating Mode

ENHANCEMENT MODE

Fet Type

N-Channel

Minimum Operating Temperature C

-55

Maximum Gate Source Leakage Current Na

100

Çalışma Sıcaklığı

-55°C~150°C TJ

Typical Gate Charge10v Nc

7.2

Power Dissipation Max

510mW Ta 6.94W Tc

Package Length

3(Max)

Maximum Drain Source Resistance Mohm

21@10V

Vgsth Max Id

2V @ 250μA

Nem Hassasiyeti (MSL)

1 (Unlimited)

Process Technology

TMOS

Rds On Max Id Vgs

21m Ω @ 6A, 10V

Terminal Pozisyonu

DUAL

Typical Rise Time Ns

17

Package Width

1.4(Max)

Category

Small Signal

Maximum Gate Threshold Voltage V

2

Eu Rohs

Compliant

Transistor Application

SWITCHING

Yayın Yılı

2014

Drive Voltage Max Rds On Min Rds On

4.5V 10V

Typical Input Capacitance Vds Pf

435@15V

Eccn Us

EAR99

Number Of Elements

1

Typical Fall Time Ns

8

Automotive

No

Drain Currentmax Abs Id

6A

Typical Gate Charge Vgs Nc

7.2@10V

Typical Turnon Delay Time Ns

9

Current Continuous Drain Id25

6A Ta

Kılıf / Paket

TO-236-3, SC-59, SOT-23-3

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.021Ohm

Gate Charge Qg Max Vgs

10.8nC @ 10V

RoHS Durumu

ROHS3 Compliant