PMPB95ENEAX

Specifications

Process Technology

TMOS

Eu Rohs

Compliant

Maximum Idss Ua

1

Package Height

0.61(Max)

Maximum Power Dissipation Mw

3300

Mounting

Surface Mount

Pcb Changed

6

Channel Type

N

Automotive

Yes

Maximum Drain Source Resistance Mohm

105@10V

Configuration

Single Quint Drain

Maximum Drain Source Voltage V

80

Maximum Gate Source Leakage Current Na

10000

Channel Mode

Enhancement

Maximum Operating Temperature C

150

Ambalaj

Tape and Reel

Maximum Gate Threshold Voltage V

2.7

Category

Power MOSFET

Typical Turnoff Delay Time Ns

15

Maximum Continuous Drain Current A

2.8

Package Length

2.1(Max)

Parça Durumu

Active

Maximum Gate Source Voltage V

20

Hts

8541.29.00.95

Typical Gate Charge Vgs Nc

9.9@10V

Ppap

Unknown

Eccn Us

EAR99

Typical Fall Time Ns

7

Typical Reverse Transfer Capacitance Vds Pf

26@40V

Number Of Elements Per Chip

1

Minimum Operating Temperature C

-55

Typical Turnon Delay Time Ns

5

Pin Sayısı

6

Supplier Temperature Grade

Automotive

Package Width

2.1(Max)

Typical Rise Time Ns

4

Supplier Package

DFN-MD EP

Svhc

Yes

Typical Input Capacitance Vds Pf

504@40V

Typical Gate Charge10v Nc

9.9