PMDXB550UNEZ

Specifications

Operating Mode

ENHANCEMENT MODE

Number Of Elements Per Chip

2

Process Technology

TMOS

Fet Feature

Standard

Case Connection

DRAIN

Channel Type

N

Typical Gate Charge Vgs Nc

0.6@4.5V

Drain Currentmax Abs Id

0.59A

Transistor Application

SWITCHING

Çalışma Sıcaklığı

-55°C~150°C TJ

Terminal Sayısı

6

Rds On Max Id Vgs

670m Ω @ 590mA, 4.5V

Package Height

0.36(Max)

Jesd30 Code

R-PDSO-N6

Svhc

Yes

Terminal Formu

NO LEAD

Montaj

Surface Mount

Channel Mode

Enhancement

Typical Fall Time Ns

3

Typical Rise Time Ns

7

Fet Type

2 N-Channel (Dual)

Reference Standard

IEC-60134

Ppap

Unknown

Typical Input Capacitance Vds Pf

30.3@15V

Parça Durumu

Active

Power Max

285mW

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Fabrika Tedarik Süresi

4 Weeks

Nem Hassasiyeti (MSL)

1 (Unlimited)

Automotive

Unknown

Typical Turnoff Delay Time Ns

12

Pcb Changed

6

Input Capacitance Ciss Max Vds

30.3pF @ 15V

Typical Turnon Delay Time Ns

4

Number Of Elements

2

Maximum Gate Threshold Voltage V

0.95

Supplier Package

DFN-B EP

Package Length

1.1

Maximum Gate Source Voltage V

8

Ds Breakdown Voltagemin

30V