PMCPB5530X,115

Specifications

Typical Rise Time Ns

15@N Channel|14@P Channel

Pcb Changed

6

Çalışma Sıcaklığı

-55°C~150°C TJ

Typical Fall Time Ns

16

Automotive

Unknown

Maximum Drain Source Voltage V

20

Channel Type

N|P

Typical Gate Charge Vgs Nc

14.4@4.5V@N Channel|8.1@5V@P Channel

Supplier Package

HUSON EP

Turn On Delay Time

4 ns

Transistor Element Material

SILICON

Terminal Sayısı

6

Typical Turnoff Delay Time Ns

40

Process Technology

TMOS

Pin Sayısı

6

Turn Off Delay Time

40 ns

Pin Sayısı

6

Eccn Us

EAR99

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Fall Time Typ

16 ns

Maximum Gate Source Leakage Current Na

100

Fet Type

N and P-Channel

Vgsth Max Id

900mV @ 250μA

Rds On Max Id Vgs

34m Ω @ 3A, 4.5V

Mounting

Surface Mount

Svhc

Yes

Gate Charge Qg Max Vgs

21.7nC @ 4.5V

Drain To Source Breakdown Voltage

20V

Continuous Drain Current Id

3.4A

Package Height

0.61(Max)

Maximum Operating Temperature C

150

Package Length

2.1(Max)

Drainsource On Resistancemax

0.034Ohm

Nem Hassasiyeti (MSL)

1 (Unlimited)

Minimum Operating Temperature C

-55

Drain Currentmax Abs Id

4A

Max Power Dissipation

490mW

Maximum Power Dissipation Mw

1170

Parça Durumu

Active