BUK9K12-60EX

Specifications

Maximum Gate Threshold Voltage V

2.1

Maximum Drain Source Voltage V

60

Typical Fall Time Ns

25.3

Ambalaj

Tape and Reel

Pin Sayısı

8

Drainsource On Resistancemax

0.0115Ohm

Hts

8541.29.00.95

Maximum Continuous Drain Current A

35

Maximum Operating Temperature C

175

Çalışma Sıcaklığı

-55°C~175°C TJ

Reference Standard

AEC-Q101; IEC-60134

Maximum Power Dissipation Mw

68000

Fet Feature

Logic Level Gate

Typical Gate Charge Vgs Nc

24.5@5V

Jesd30 Code

R-PDSO-G6

Transistor Application

SWITCHING

Number Of Elements

2

Configuration

Dual Dual Drain

Ppap

Unknown

Fabrika Tedarik Süresi

12 Weeks

Kılıf / Paket

SOT-1205, 8-LFPAK56

RoHS Durumu

ROHS3 Compliant

Continuous Drain Current Id

35A

Number Of Elements Per Chip

2

Package Height

1.05(Max)

Category

Power MOSFET

Drain To Source Voltage Vdss

60V

Rds On Max Id Vgs

10.7m Ω @ 15A, 10V

Maximum Idss Ua

1

Typical Turnon Delay Time Ns

15.1

Input Capacitance Ciss Max Vds

3470pF @ 25V

Nem Hassasiyeti (MSL)

1 (Unlimited)

Automotive

Yes

Montaj

Surface Mount

Supplier Temperature Grade

Automotive

Fet Type

2 N-Channel (Dual)

Transistor Element Material

SILICON

Yayın Yılı

2013

Supplier Package

LFPAK-D

Typical Input Capacitance Vds Pf

2602@25V