BLF6G10LS-160,112

Specifications

Pin Sayısı

3

Typical Reverse Transfer Capacitance Vds Pf

4.2@32V

Typical Power Gain Db

22

Typical Forward Transconductance S

13.5

Parça Durumu

Obsolete

Maximum Gate Threshold Voltage V

2.4

Package Length

20.7(Max)

Maximum Continuous Drain Current A

39

Channel Type

N

Package Width

9.91(Max)

Output Power W

32(Typ)

Mode Of Operation

2-Carrier W-CDMA

Minimum Operating Temperature C

-65

Maximum Frequency Mhz

1000

Ppap

Unknown

Number Of Elements Per Chip

1

Package Height

4.72(Max)

Eccn Us

EAR99

Supplier Package

SOT-502B

Minimum Frequency Mhz

800

Maximum Drain Source Voltage V

65

Pcb Changed

3

Maximum Gate Source Voltage V

13

Configuration

Single

Maximum Vswr

10

Ambalaj

Blister

Maximum Operating Temperature C

225

Channel Mode

Enhancement

Maximum Drain Source Resistance Mohm

70(Typ)@6.15V

Automotive

Unknown

Mounting

Surface Mount

Maximum Gate Source Leakage Current Na

450

Typical Drain Efficiency

27

Process Technology

LDMOS

Maximum Idss Ua

5