568-9495-1-ND

Specifications

Typical Gate Charge Vgs Nc

141@10V|130@10V

Typical Rise Time Ns

46

Maximum Idss Ua

10

Maximum Power Dissipation Mw

306000

Eccn Us

EAR99

Hts

8541.29.00.95

Category

Power MOSFET

Maximum Continuous Drain Current A

100

Maximum Gate Threshold Voltage V

4

Parça Durumu

Active

Maximum Gate Source Leakage Current Na

100

Maximum Gate Source Voltage V

20

Typical Gate Charge10v Nc

141|130

Svhc

Yes

Channel Mode

Enhancement

Typical Fall Time Ns

34

Minimum Operating Temperature C

-55

Typical Input Capacitance Vds Pf

8061@50V

Number Of Elements Per Chip

1

Configuration

Single

Typical Turnon Delay Time Ns

31

Maximum Drain Source Voltage V

100

Maximum Drain Source Resistance Mohm

5.6@10V

Eu Rohs

Compliant with Exemption

Channel Type

N

Maximum Operating Temperature C

175

Svhc Exceeds Threshold

Yes

Typical Turnoff Delay Time Ns

83

Ambalaj

Tape and Reel