2N7002BKM,315

Specifications

Case Connection

DRAIN

Maximum Drain Source Resistance Mohm

1600@10V

Automotive

Yes

Typical Input Capacitance Vds Pf

33@10V

Maximum Drain Source Voltage V

60

JESD-609 Kodu

e3

Element Configuration

Single

Max Dual Supply Voltage

60V

Typical Turnon Delay Time Ns

5

Number Of Elements Per Chip

1

Eccn Us

EAR99

Eu Rohs

Compliant

Typical Rise Time Ns

6

Transistor Application

SWITCHING

Fall Time Typ

7 ns

Maximum Continuous Drain Current A

0.45

Fabrika Tedarik Süresi

20 Weeks

Pin Sayısı

3

Additional Feature

LOGIC LEVEL COMPATIBLE

Input Capacitance Ciss Max Vds

50pF @ 10V

Terminal Pozisyonu

BOTTOM

Package Height

0.47(Max)

Process Technology

TMOS

Power Dissipation

715mW

Channel Mode

Enhancement

Montaj Tipi

Surface Mount

Configuration

Single

Turn On Delay Time

5 ns

Vgs Max

±20V

Maximum Gate Source Voltage V

±20

Yüzey Montaj

YES

Rise Time

6ns

Drain Currentmax Abs Id

0.45A

Channel Type

N

Kılıf / Paket

SC-101, SOT-883

Contact Plating

Tin

Pin Sayısı

3

Transistor Element Material

SILICON

Radyasyon Dayanımı

No

Parça Durumu

Obsolete