SFW19R1STGE1LF

Specifications

Montaj Tipi

Surface Mount

Paket

Bulk

Power Dissipation Max

1.8W (Ta)

Vgs Max

±12V

Current Continuous Drain Id25

5.7A (Ta)

Rds On Max Id Vgs

35mOhm @ 3.8A, 4.5V

Fet Type

N-Channel

Seri

HEXFET®

Kılıf / Paket

8-TSSOP, 8-MSOP (0.118, 3.00mm Width)

Ürün Durumu

Active

Gate Charge Qg Max Vgs

22 nC @ 4.5 V

Input Capacitance Ciss Max Vds

650 pF @ 15 V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Tedarikçi Cihaz Paketi

Micro8™

Vgsth Max Id

700mV @ 250µA (Min)

Drain To Source Voltage Vdss

20 V