SSI2N80A

Specifications

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Body Material

PLASTIC/EPOXY

Number Of Terminals

3

Avalanche Energy Rating Eas

213 mJ

Transistor Element Material

SILICON

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

800 V

Package Style

IN-LINE

Transistor Application

SWITCHING

Qualification Status

Not Qualified

REACH Uyumluluk Kodu

unknown

Rohs Code

No

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL

Terminal Pozisyonu

SINGLE

Yüzey Montaj

NO

Pin Sayısı

3

Power Dissipationmax Abs

80 W

Drainsource On Resistancemax

6 Ω

Drain Currentmax Id

2 A

Jesd30 Code

R-PSIP-T3

Terminal Formu

THROUGH-HOLE

JESD-609 Kodu

e0

Package Shape

RECTANGULAR

Number Of Elements

1

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Temperaturemax

150 °C

Part Life Cycle Code

Obsolete

Pulsed Drain Currentmax Idm

8 A

Terminal Kaplaması

TIN LEAD

Package Description

IN-LINE, R-PSIP-T3