IRFW650B

Specifications

Avalanche Energy Rating Eas

600 mJ

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Pin Sayısı

3

Package Style

SMALL OUTLINE

Configuration

SINGLE WITH BUILT-IN DIODE

Transistor Element Material

SILICON

JESD-609 Kodu

e0

Terminal Formu

GULL WING

Yüzey Montaj

YES

Part Life Cycle Code

Obsolete

Number Of Terminals

2

Operating Temperaturemax

150 °C

Rohs Code

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

REACH Uyumluluk Kodu

compliant

Number Of Elements

1

ECCN Kodu

EAR99

Terminal Kaplaması

TIN LEAD

Drainsource On Resistancemax

0.085 Ω

Operating Mode

ENHANCEMENT MODE

Package Description

SMALL OUTLINE, R-PSSO-G2

Terminal Pozisyonu

SINGLE

Qualification Status

Not Qualified

Case Connection

DRAIN

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-PSSO-G2

Pulsed Drain Currentmax Idm

112 A

Package Shape

RECTANGULAR

Package Body Material

PLASTIC/EPOXY

Power Dissipationmax Abs

156 W

Transistor Application

SWITCHING

Drain Currentmax Id

28 A

Ds Breakdown Voltagemin

200 V

Kurşunsuz Kodu

No