FQP12N20L

Specifications

Avalanche Energy Rating Eas

210 mJ

Polaritychannel Type

N-CHANNEL

Operating Mode

ENHANCEMENT MODE

Package Style

FLANGE MOUNT

Terminal Formu

THROUGH-HOLE

Power Dissipationmax Abs

90 W

Package Body Material

PLASTIC/EPOXY

Transistor Element Material

SILICON

Pulsed Drain Currentmax Idm

46.4 A

Pin Sayısı

3

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Terminal Pozisyonu

SINGLE

Drainsource On Resistancemax

0.32 Ω

Operating Temperaturemax

150 °C

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Transistor Application

SWITCHING

Qualification Status

Not Qualified

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Terminal Kaplaması

TIN LEAD

Configuration

SINGLE WITH BUILT-IN DIODE

Part Package Code

TO-220AB

Jesd30 Code

R-PSFM-T3

Number Of Elements

1

Drain Currentmax Id

11.6 A

REACH Uyumluluk Kodu

unknown

Number Of Terminals

3

Package Description

FLANGE MOUNT, R-PSFM-T3

Jedec95 Code

TO-220AB

Ds Breakdown Voltagemin

200 V

Yüzey Montaj

NO

JESD-609 Kodu

e0

Part Life Cycle Code

Obsolete

Rohs Code

No