FQB58N08

Specifications

Transistor Element Material

SILICON

Qualification Status

Not Qualified

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Jedec95 Code

TO-263AB

ECCN Kodu

EAR99

Polaritychannel Type

N-CHANNEL

JESD-609 Kodu

e0

Rohs Code

No

Avalanche Energy Rating Eas

560 mJ

Ihs Manufacturer

FAIRCHILD SEMICONDUCTOR CORP

Jesd30 Code

R-PSSO-G2

Yüzey Montaj

YES

Power Dissipationmax Abs

146 W

Ds Breakdown Voltagemin

80 V

Number Of Terminals

2

Part Package Code

TO-263

Package Shape

RECTANGULAR

Terminal Formu

GULL WING

Pin Sayısı

3

Drainsource On Resistancemax

0.024 Ω

Pulsed Drain Currentmax Idm

230 A

Case Connection

DRAIN

REACH Uyumluluk Kodu

unknown

Package Description

SMALL OUTLINE, R-PSSO-G2

Operating Mode

ENHANCEMENT MODE

Drain Currentmax Id

57.5 A

Terminal Pozisyonu

SINGLE

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Part Life Cycle Code

Obsolete

Transistor Application

SWITCHING

Number Of Elements

1

Operating Temperaturemax

175 °C

Terminal Kaplaması

TIN LEAD