FDD5N50TM_WS

Specifications

Reflow Temperaturemax S

NOT SPECIFIED

Jedec95 Code

TO-252AA

HTS Kodu

8541.29.00.95

Operating Temperaturemax

150 °C

REACH Uyumluluk Kodu

compliant

Manufacturer Package Code

TO252A03

Ds Breakdown Voltagemin

500 V

Drain Currentmax Id

4 A

Drain Currentmax Abs Id

4 A

ECCN Kodu

EAR99

Üretici Parça No

FDD5N50TM_WS

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Part Life Cycle Code

Active

Polaritychannel Type

N-CHANNEL

Case Connection

DRAIN

Package Description

SMALL OUTLINE, R-PSSO-G2

Package Style

SMALL OUTLINE

Risk Rank

5.17

JESD-609 Kodu

e3

Moisture Sensitivity Levels

1

Rohs Code

Yes

Fabrika Tedarik Süresi

4 Weeks

Ihs Manufacturer

ON SEMICONDUCTOR

Terminal Formu

GULL WING

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

16 A

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

256 mJ

Transistor Element Material

SILICON

Number Of Elements

1

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Configuration

SINGLE WITH BUILT-IN DIODE

Power Dissipationmax Abs

40 W

Package Body Material

PLASTIC/EPOXY

Jesd30 Code

R-PSSO-G2

Terminal Pozisyonu

SINGLE

Brand Name

ON Semiconductor

Terminal Kaplaması

Tin (Sn)

Drainsource On Resistancemax

1.4 Ω

Yüzey Montaj

YES