NDS8947

Specifications

Number Of Elements

2

Nominal Vgs

-1.6 V

Fall Time Typ

19 ns

Drain To Source Breakdown Voltage

-30V

Akım Değeri

-4A

Direnç

65mOhm

Power Dissipation

2W

Rise Time

20ns

Ürün Durumu

Obsolete

Operating Mode

ENHANCEMENT MODE

Continuous Drain Current Id

-4A

Gate To Source Voltage Vgs

20V

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Dual Supply Voltage

-30V

Tedarikçi Cihaz Paketi

8-SOIC

Genişlik

4.05mm

Pin Sayısı

8

Transistor Element Material

SILICON

Input Capacitance Ciss Max Vds

690pF @ 15V

Row Spacing

6.3 mm

Montaj Tipi

Surface Mount

Turn Off Delay Time

40 ns

Terminal Sayısı

8

Montaj

Surface Mount

Voltage Rated Dc

-30V

Max Power Dissipation

900mW

Threshold Voltage

-1.6V

Fet Type

2 P-Channel (Dual)

Gate Charge Qg Max Vgs

30nC @ 10V

Terminal Formu

GULL WING

Radyasyon Dayanımı

No

Drain Currentmax Abs Id

4A

Parça Durumu

Obsolete

Kurşunsuz

Lead Free

Drain To Source Voltage Vdss

30V

Transistor Application

SWITCHING

Rds On Max Id Vgs

65mOhm @ 4A, 10V

Turn On Delay Time

9 ns

Element Configuration

Dual