Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Montaj Tipi
- Through Hole
- Noise Figure Db Typ F
- 3dB ~ 5dB @ 100MHz
- Transistor Type
- NPN
- Kılıf / Paket
- TO-226-3, TO-92-3 (TO-226AA) Formed Leads
- Power Max
- 250mW
- Paket
- Bulk
- Voltage Collector Emitter Breakdown Max
- 20V
- Currentcollector Ic Max
- 20mA
- Dc Current Gain Hfe Min Ic Vce
- 120 @ 1mA, 6V
- Tedarikçi Cihaz Paketi
- TO-92-3
- Frequency Transition
- 600MHz
- Ürün Durumu
- Obsolete
- Çalışma Sıcaklığı
- 150°C (TJ)
Related Products
In Stock
Microsemi Corporation
0204-125
RF BJT Transistors
In Stock
Microsemi Corporation
0510-50A
RF BJT Transistors
In Stock
HARTING
09022326834
RF BJT Transistors
In Stock
HARTING
09023646919
RF BJT Transistors
In Stock
HARTING
09030006246
RF BJT Transistors
In Stock
HARTING
09030006247
RF BJT Transistors
In Stock
HARTING
09031466903
RF BJT Transistors
In Stock
HARTING
09032322850222
RF BJT Transistors