Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Tedarikçi Cihaz Paketi
- TO-3P
- Ambalaj
- Tube
- Polaritychannel Type
- N-CHANNEL
- Collectoremitter Breakdown Voltage
- 330V
- Pin Sayısı
- 3
- Temel Ürün No
- FGA90
- Igbt Type
- Trench
- Radyasyon Dayanımı
- No
- Terminal Sayısı
- 3
- Turn Off Timenom Toff
- 360 ns
- Weight
- 6.401g
- Max Power Dissipation
- 223W
- Montaj
- Through Hole
- Lifecycle Status
- ACTIVE, NOT REC (Last Updated: 4 days ago)
- Giriş Tipi
- Standard
- Power Max
- 223 W
- Yayın Yılı
- 2004
- Paket
- Bulk
- Transistor Application
- POWER CONTROL
- JESD-609 Kodu
- e3
- Gate Charge
- 95 nC
- Max Collector Current
- 90A
- Fabrika Tedarik Süresi
- 36 Weeks
- Currentcollector Ic Max
- 90 A
- Transistor Element Material
- SILICON
- Parça Durumu
- Obsolete
- Additional Feature
- LOW CONDUCTION LOSS
- Collector Emitter Voltage Vceo
- 330V
- Current Collector Pulsed Icm
- 330 A
- HTS Kodu
- 8541.29.00.95
- Terminal Kaplaması
- MATTE TIN
- Kurşunsuz Kodu
- yes
- Number Of Elements
- 1
- Turn On Time
- 60 ns
- Voltage Collector Emitter Breakdown Max
- 330 V
- Kurşunsuz
- Lead Free
- Ürün Durumu
- Active
- Element Configuration
- Single
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