FDS8949-F085

Specifications

Jesd30 Code

R-PDSO-G8

Çalışma Sıcaklığı

-40°C ~ 125°C

Yüzey Montaj

YES

Current Continuous Drain Id25

6A

RoHS Durumu

ROHS3 Compliant

Ambalaj

Tape & Reel (TR)

Operating Mode

ENHANCEMENT MODE

Pulsed Drain Currentmax Idm

20A

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Avalanche Energy Rating Eas

26 mJ

Transistor Element Material

SILICON

Power Dissipationmax Abs

2W

Configuration

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

Fet Type

2 N-Channel (Dual)

Function

Enable/Disable

Input Capacitance Ciss Max Vds

955pF @ 20V

Parça Durumu

Active

Nem Hassasiyeti (MSL)

1 (Unlimited)

Ds Breakdown Voltagemin

40V

Drain Currentmax Abs Id

6A

Vgsth Max Id

3V @ 250µA

Tedarikçi Cihaz Paketi

8-SOIC

Ürün Durumu

Active

Besleme Gerilimi

1.8V

Maks. Oturma Yüksekliği

0.031 (0.80mm)

Drainsource On Resistancemax

0.029Ohm

Fet Feature

Logic Level Gate

Lifecycle Status

ACTIVE (Last Updated: 4 days ago)

Boyut / Ölçü

0.079 L x 0.063 W (2.00mm x 1.60mm)

Current Supply Max

4.5mA

Tip

XO (Standard)

Fabrika Tedarik Süresi

7 Weeks

Montaj Tipi

Surface Mount

Temel Ürün No

SIT8924

Gate Charge Qg Max Vgs

11nC @ 5V

Terminal Sayısı

8

Number Of Elements

2

Power Max

2W

Fet Technology

METAL-OXIDE SEMICONDUCTOR