FDMS3602S

Specifications

Radyasyon Dayanımı

No

Avalanche Energy Rating Eas

50 mJ

Gate To Source Voltage Vgs

20V

Turn Off Delay Time

31 ns

Terminal Kaplaması

Tin (Sn)

Number Of Elements

2

Input Capacitance Ciss Max Vds

1680pF @ 13V

Current Continuous Drain Id25

15A, 26A

Ambalaj

Tape & Reel (TR)

Gate Charge Qg Max Vgs

27nC @ 10V

Continuous Drain Current Id

26A

Kılıf / Paket

8-PowerTDFN

RoHS Durumu

ROHS3 Compliant

Transistor Element Material

SILICON

Power Dissipation

2.5W

Max Power Dissipation

1W

Vgsth Max Id

3V @ 250µA

Nominal Vgs

1.8 V

Yayın Yılı

2006

Drain To Source Breakdown Voltage

25V

Reach Svhc

No SVHC

Drain To Source Voltage Vdss

25V

Seri

*

Weight

90mg

JESD-609 Kodu

e3

Montaj Tipi

Surface Mount

Fall Time Typ

3.2 ns

Pulsed Drain Currentmax Idm

40A

Pin Sayısı

8

Jesd30 Code

R-PDSO-N6

Rds On Max Id Vgs

5.6mOhm @ 15A, 10V

Çalışma Sıcaklığı

-55°C ~ 150°C (TJ)

Terminal Sayısı

6

Transistor Application

SWITCHING

Case Connection

DRAIN SOURCE

Fet Feature

Logic Level Gate

Drain Currentmax Abs Id

15A

Direnç

5.6MOhm

Operating Mode

ENHANCEMENT MODE

Kurşunsuz Kodu

yes