Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Input Capacitance Ciss Max Vds
- 660pF @ 15V
- Continuous Drain Current Id
- 13A
- Number Of Channels
- 2
- RoHS Durumu
- ROHS3 Compliant
- Power Max
- 700mW, 1W
- Gate Charge Qg Max Vgs
- 10nC @ 10V
- Drain To Source Voltage Vdss
- 30V
- Feedback Capmax Crss
- 30 pF
- Kurşunsuz Kodu
- yes
- Tedarikçi Cihaz Paketi
- 8-Power33 (3x3)
- Max Power Dissipation
- 1W
- Operating Mode
- ENHANCEMENT MODE
- Weight
- 186mg
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Kılıf / Paket
- 8-PowerWDFN
- Terminal Formu
- NO LEAD
- Vgsth Max Id
- 3V @ 250µA
- Ds Breakdown Voltagemin
- 30V
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Fet Feature
- Logic Level Gate
- Drain Currentmax Abs Id
- 7A
- Gate To Source Voltage Vgs
- 20V
- Montaj
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Fet Type
- 2 N-Channel (Dual)
- Case Connection
- DRAIN SOURCE
- Number Of Elements
- 2
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Terminal Kaplaması
- Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
- Terminal Sayısı
- 8
- Fabrika Tedarik Süresi
- 23 Weeks
- ECCN Kodu
- EAR99
- Transistor Element Material
- SILICON
- Paket
- Bulk
- Pin Sayısı
- 8
- Parça Durumu
- Active
- JESD-609 Kodu
- e4
- Ürün Durumu
- Active
- Rds On Max Id Vgs
- 22mOhm @ 6A, 10V
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