Volume pricing
- 1+ pcs$0.58
- 10+ pcs$0.54
- 100+ pcs$0.51
- 500+ pcs$0.48
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Number Of Channels
- 2
- Input Capacitance Ciss Max Vds
- 660pF @ 15V
- Rise Time
- 4ns
- RoHS Durumu
- ROHS3 Compliant
- Uzunluk
- 3mm
- Drain To Source Breakdown Voltage
- 30V
- Drain To Source Voltage Vdss
- 30V
- Gate Charge Qg Max Vgs
- 10nC @ 10V
- Feedback Capmax Crss
- 30 pF
- Kurşunsuz Kodu
- yes
- Tedarikçi Cihaz Paketi
- 8-Power33 (3x3)
- Max Power Dissipation
- 900mW
- Yükseklik
- 800μm
- Kılıf / Paket
- 8-PowerWDFN
- Turn Off Delay Time
- 38 ns
- Vgsth Max Id
- 3V @ 250µA
- Lifecycle Status
- ACTIVE (Last Updated: 5 days ago)
- Tepe Reflow Sıcaklığı (°C)
- NOT SPECIFIED
- Montaj
- Surface Mount
- Fet Type
- 2 N-Channel (Dual)
- Fabrika Tedarik Süresi
- 23 Weeks
- Turn On Delay Time
- 13 ns
- Transistor Element Material
- SILICON
- ECCN Kodu
- EAR99
- Pin Sayısı
- 8
- Paket
- Bulk
- Genişlik
- 3mm
- JESD-609 Kodu
- e4
- Element Configuration
- Dual
- Seri
- PowerTrench®
- Continuous Drain Current Id
- 8A
- Power Max
- 700mW, 900mW
- Tepe Reflow Süresi (maks. sn)
- NOT SPECIFIED
- Weight
- 186mg
- Operating Mode
- ENHANCEMENT MODE
- Terminal Formu
- NO LEAD
- Fet Feature
- Logic Level Gate
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Gate To Source Voltage Vgs
- 20V
- Drain Currentmax Abs Id
- 6A
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