Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Element Configuration
- Dual
- Power Max
- 1.3W
- Yayın Yılı
- 2006
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 20nC @ 10V
- Max Power Dissipation
- 1.3W
- Montaj Tipi
- Surface Mount
- Radyasyon Dayanımı
- No
- Temel Parça No
- FDD8424
- Ambalaj
- Tape & Reel (TR)
- Turn On Delay Time
- 7 ns
- RoHS Durumu
- RoHS Compliant
- Current Continuous Drain Id25
- 9A, 6.5A
- Lifecycle Status
- LAST SHIPMENTS (Last Updated: 23 hours ago)
- Fet Feature
- Logic Level Gate
- Çalışma Sıcaklığı
- -55°C ~ 150°C (TJ)
- Ürün Durumu
- Obsolete
- Tedarikçi Cihaz Paketi
- TO-252-4
- Vgsth Max Id
- 3V @ 250µA
- Continuous Drain Current Id
- 6.5A
- Drain Currentmax Abs Id
- 20A
- Kurşunsuz Kodu
- yes
- Drain To Source Voltage Vdss
- 40V
- Gate To Source Voltage Vgs
- 20V
- Pin Sayısı
- 5
- Paket
- Tube
- Montaj
- Surface Mount
- Kılıf / Paket
- TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Weight
- 260.37mg
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Parça Durumu
- Active
- Rds On Max Id Vgs
- 24mOhm @ 9A, 10V
- Drain To Source Breakdown Voltage
- 40V
- Input Capacitance Ciss Max Vds
- 1000pF @ 20V
- Power Dissipation
- 30W
- Seri
- *
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Fet Type
- N and P-Channel
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