Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- ECCN Kodu
- EAR99
- Turn Off Delay Time
- 7.4 ns
- Transistor Element Material
- SILICON
- Kılıf / Paket
- SOT-23-6 Thin, TSOT-23-6
- Gate To Source Voltage Vgs
- 8V
- Seri
- *
- Terminal Kaplaması
- Tin (Sn)
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
- Montaj Tipi
- Surface Mount
- Akım Değeri
- 220mA
- Current Continuous Drain Id25
- 220mA, 120mA
- Rds On Max Id Vgs
- 4Ohm @ 400mA, 4.5V
- Operating Mode
- ENHANCEMENT MODE
- Power Dissipation
- 900mW
- Additional Feature
- LOGIC LEVEL COMPATIBLE
- Kurşunsuz Kodu
- yes
- Direnç
- 4Ohm
- Radyasyon Dayanımı
- No
- Fet Type
- N and P-Channel
- Paket
- Bulk
- Number Of Elements
- 2
- Fall Time Typ
- 6 ns
- Reach Svhc
- No SVHC
- Tedarikçi Cihaz Paketi
- SuperSOT™-6
- Continuous Drain Current Id
- 220mA
- Polaritychannel Type
- N-CHANNEL AND P-CHANNEL
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Gate Charge Qg Max Vgs
- 0.4nC @ 4.5V
- Terminal Sayısı
- 6
- Rise Time
- 6ns
- Dual Supply Voltage
- 25V
- Drain To Source Voltage Vdss
- 25V
- Fabrika Tedarik Süresi
- 10 Weeks
- Vgsth Max Id
- 1.5V @ 250µA
- Threshold Voltage
- 850mV
- Max Power Dissipation
- 700mW
- Montaj
- Surface Mount
- Yayın Yılı
- 1997
- Pin Sayısı
- 6
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