MMFTN2362

Specifications

JESD-609 Kodu

e3

Transistor Element Material

SILICON

Configuration

SINGLE WITH BUILT-IN DIODE

REACH Uyumluluk Kodu

unknown

Power Dissipationmax Abs

1.25 W

Drainsource On Resistancemax

0.08 Ω

Number Of Terminals

3

Part Life Cycle Code

Active

Pulsed Drain Currentmax Idm

12 A

Package Shape

RECTANGULAR

ECCN Kodu

EAR99

Moisture Sensitivity Levels

1

Package Style

SMALL OUTLINE

Package Body Material

PLASTIC/EPOXY

Yüzey Montaj

YES

Ds Breakdown Voltagemin

60 V

Drain Currentmax Id

3 A

Operating Temperaturemin

-55 °C

Feedback Capmax Crss

18 pF

Operating Temperaturemax

150 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Number Of Elements

1

Rohs Code

Yes

Polaritychannel Type

N-CHANNEL

Jesd30 Code

R-PDSO-G3

Terminal Formu

GULL WING

Transistor Application

SWITCHING

Terminal Kaplaması

Matte Tin (Sn) - annealed

Terminal Pozisyonu

DUAL

Ihs Manufacturer

DIOTEC SEMICONDUCTOR AG

Operating Mode

ENHANCEMENT MODE

Jedec95 Code

TO-236