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GBS4B

Diotec Semiconductor AG

GBS4B

RF Diodes

RoHS: Compliant

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Specifications

Part Life Cycle Code
Active
Diode Element Material
SILICON
Operating Temperaturemin
-50 °C
Moisture Sensitivity Levels
1
Peak Forward Voltage V
1.05@2A
Forward Voltagemax Vf
1.05 V
Yüzey Montaj
NO
Eccn Us
EAR99
Aec Qualified
Yes
Operating Temperaturemax
150 °C
Qualification Status
Not Qualified
Bridge Type
Single Phase
Peak Average Forward Current A
4@Ta=50C
Mounting
Through Hole
Reflow Temperaturemax S
NOT SPECIFIED
Package Height
10
HTS Kodu
8541.10.00.80
Configuration
Single
Package Shape
RECTANGULAR
Package Description
R-PSIP-T4
Diode Type
BRIDGE RECTIFIER DIODE
ECCN Kodu
EAR99
Number Of Phases
1
Minimum Operating Temperature C
-50
Terminal Formu
THROUGH-HOLE
Number Of Terminals
4
Military
No
Jesd30 Code
R-PSIP-T4
Risk Rank
5.66
Output Currentmax
2.3 A
Üretici Parça No
GBS4B
Tepe Reflow Sıcaklığı (°C)
260
Peak Nonrepetitive Forward Surge Current A
90
Pcb Changed
4
Rep Pk Reverse Voltagemax
100 V
Peak Reverse Current Ua
5
Peak Rms Reverse Voltage V
70
RoHS Durumu
Yes with exemptions
Parça Durumu
Active
Maximum Operating Temperature C
150

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