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GBI10B

Diotec Semiconductor AG

GBI10B

RF Diodes

RoHS: Compliant

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RoHS

Compliant

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Specifications

Risk Rank
2.25
Eccn Us
EAR99
Peak Average Forward Current A
10
Mounting
Through Hole
Peak Forward Voltage V
1.1@5A
Military
No
Yüzey Montaj
NO
Reflow Temperaturemax S
NOT SPECIFIED
Additional Feature
UL RECOGNIZED
Ihs Manufacturer
DIOTEC SEMICONDUCTOR AG
Operating Temperaturemax
150 °C
Peak Nonrepetitive Forward Surge Current A
200
Peak Reverse Current Ua
5
Minimum Operating Temperature C
-50
Diode Type
BRIDGE RECTIFIER DIODE
Package Height
20
Peak Rms Reverse Voltage V
70
Package Style
IN-LINE
JESD-609 Kodu
e3
Rep Pk Reverse Voltagemax
100 V
Terminal Formu
THROUGH-HOLE
Bridge Type
Single Phase
Moisture Sensitivity Levels
1
Part Life Cycle Code
Active
Terminal Kaplaması
Matte Tin (Sn) - annealed
Package Length
30
Package Description
R-PSIP-T4
Peak Reverse Recovery Time Ns
1500(Typ)
RoHS Durumu
Yes with exemptions
Diode Element Material
SILICON
Parça Durumu
Active
Number Of Phases
1
Peak Reverse Repetitive Voltage V
100
Üretici Parça No
GBI10B
Supplier Temperature Grade
Commercial
ECCN Kodu
EAR99
Tepe Reflow Sıcaklığı (°C)
260
HTS Kodu
8541.10.00.80
Package Width
4.6
Configuration
Single

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