DI080N06PQ

Specifications

Operating Temperaturemin

-55 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

RECTANGULAR

Polaritychannel Type

N-CHANNEL

Package Body Material

PLASTIC/EPOXY

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.003 Ω

Date Of Intro

2020-03-23

Package Description

TDSON-8, 8 PIN

REACH Uyumluluk Kodu

compliant

Avalanche Energy Rating Eas

185.4 mJ

Yüzey Montaj

YES

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

480 A

Tepe Reflow Sıcaklığı (°C)

260

Case Connection

DRAIN

JESD-609 Kodu

e2

Rohs Code

Yes

Terminal Kaplaması

Tin/Silver (Sn96.5Ag3.5)

Number Of Elements

1

Terminal Formu

FLAT

Tepe Reflow Süresi (maks. sn)

10

Number Of Terminals

8

Jesd30 Code

R-PDSO-F8

Drain Currentmax Id

105 A

Transistor Element Material

SILICON

Additional Feature

AVALANCHE RATED

Package Style

SMALL OUTLINE

ECCN Kodu

EAR99

Power Dissipationmax Abs

65.8 W

Ihs Manufacturer

DIOTEC SEMICONDUCTOR AG

Ds Breakdown Voltagemin

65 V

Operating Mode

ENHANCEMENT MODE

Moisture Sensitivity Levels

1

Operating Temperaturemax

150 °C

Part Life Cycle Code

Active

Feedback Capmax Crss

34 pF

Terminal Pozisyonu

DUAL