DI070P04PQ

Specifications

Package Shape

RECTANGULAR

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Temperaturemin

-55 °C

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0065 Ω

Package Description

TDSON, QFN-8, DFN5060, 8 PIN

Package Body Material

PLASTIC/EPOXY

Polaritychannel Type

P-CHANNEL

Avalanche Energy Rating Eas

150 mJ

REACH Uyumluluk Kodu

compliant

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

300 A

Transistor Application

SWITCHING

Rohs Code

Yes

JESD-609 Kodu

e2

Case Connection

DRAIN

Yüzey Montaj

YES

Number Of Elements

1

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Terminal Kaplaması

Tin/Silver (Sn96.5Ag3.5)

Drain Currentmax Id

64.5 A

Transistor Element Material

SILICON

Number Of Terminals

8

Jesd30 Code

R-PDSO-F8

Ihs Manufacturer

DIOTEC SEMICONDUCTOR AG

Operating Temperaturemax

150 °C

Part Life Cycle Code

Active

Moisture Sensitivity Levels

1

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

40 V

Package Style

SMALL OUTLINE

Power Dissipationmax Abs

46 W

Terminal Pozisyonu

DUAL

Feedback Capmax Crss

344 pF