DI045N03PT

Specifications

Package Description

QFN-8

Configuration

SINGLE WITH BUILT-IN DIODE

Drainsource On Resistancemax

0.0044 Ω

Polaritychannel Type

N-CHANNEL

Package Body Material

PLASTIC/EPOXY

Package Shape

SQUARE

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Operating Temperaturemin

-55 °C

Rohs Code

Yes

Case Connection

DRAIN

Transistor Application

SWITCHING

Pulsed Drain Currentmax Idm

280 A

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Yüzey Montaj

YES

Avalanche Energy Rating Eas

55 mJ

REACH Uyumluluk Kodu

compliant

Drain Currentmax Id

45 A

Transistor Element Material

SILICON

Jesd30 Code

S-PDSO-F8

Number Of Terminals

8

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Terminal Formu

FLAT

Number Of Elements

1

Terminal Pozisyonu

DUAL

Feedback Capmax Crss

230 pF

Operating Temperaturemax

150 °C

Part Life Cycle Code

Active

Ds Breakdown Voltagemin

30 V

Operating Mode

ENHANCEMENT MODE

Ihs Manufacturer

DIOTEC SEMICONDUCTOR AG

Power Dissipationmax Abs

16 W

ECCN Kodu

EAR99

Package Style

SMALL OUTLINE