DI010N03PW

Specifications

Yüzey Montaj

YES

Case Connection

DRAIN

Rohs Code

Yes

JESD-609 Kodu

e3

Tepe Reflow Sıcaklığı (°C)

NOT SPECIFIED

Pulsed Drain Currentmax Idm

50 A

Transistor Application

SWITCHING

REACH Uyumluluk Kodu

compliant

Avalanche Energy Rating Eas

20 mJ

Polaritychannel Type

N-CHANNEL

Package Body Material

PLASTIC/EPOXY

Drainsource On Resistancemax

0.012 Ω

Configuration

SINGLE WITH BUILT-IN DIODE

Operating Temperaturemin

-55 °C

Fet Technology

METAL-OXIDE SEMICONDUCTOR

Package Shape

SQUARE

Feedback Capmax Crss

105 pF

Terminal Pozisyonu

DUAL

Power Dissipationmax Abs

1.4 W

Package Style

SMALL OUTLINE

ECCN Kodu

EAR99

Moisture Sensitivity Levels

1

Operating Mode

ENHANCEMENT MODE

Ds Breakdown Voltagemin

30 V

Part Life Cycle Code

Active

Operating Temperaturemax

150 °C

Ihs Manufacturer

DIOTEC SEMICONDUCTOR AG

Jesd30 Code

S-PDSO-N6

Number Of Terminals

6

Transistor Element Material

SILICON

Drain Currentmax Id

10 A

Terminal Kaplaması

Matte Tin (Sn) - annealed

Terminal Formu

NO LEAD

Tepe Reflow Süresi (maks. sn)

NOT SPECIFIED

Number Of Elements

6