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Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Voltage Collector Emitter Breakdown Max
- 15V 12V
- Montaj Tipi
- Surface Mount
- Emitter Base Voltage Vebo
- 7.5V
- Pin Sayısı
- 832
- Collectoremitter Saturation Voltage
- 240mV
- Element Configuration
- Dual
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 3W
- Case Connection
- COLLECTOR
- Current Collector Cutoff Max
- 25nA
- Polarity
- NPN, PNP
- Gain Bandwidth Product
- 120MHz
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Continuous Collector Current
- -4A
- Yayın Yılı
- 2002
- Terminal Sayısı
- 10
- Collector Emitter Voltage Vceo
- 280mV
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collector Base Voltage Vcbo
- 20V
- Parça Durumu
- Obsolete
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Number Of Elements
- 2
- Currentcollector Ic Max
- 4.5A 4A
- Frequency Transition
- 120MHz 110MHz
- Terminal Kaplaması
- Matte Tin (Sn)
- Yükseklik
- 1mm
- Temel Parça No
- ZXTDA1M832
- Terminal Pozisyonu
- QUAD
- Genişlik
- 2mm
- Max Breakdown Voltage
- 12V
- Kılıf / Paket
- 8-VDFN Exposed Pad
- Pin Sayısı
- 10
- Max Collector Current
- 4A
- Transition Frequency
- 120MHz
- JESD-609 Kodu
- e3
- Frekans
- 120MHz
- Max Power Dissipation
- 1W
- Dc Current Gain Hfe Min Ic Vce
- 200 @ 3A 2V / 180 @ 2.5A 2V
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