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Priced by quantity and lead time.
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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Frekans
- 165MHz
- Max Power Dissipation
- 2.45W
- Radyasyon Dayanımı
- No
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 200mA 2V
- Polarity
- NPN
- Gain Bandwidth Product
- 165MHz
- Ambalaj
- Tape & Reel (TR)
- RoHS Durumu
- ROHS3 Compliant
- Transistor Application
- SWITCHING
- Yayın Yılı
- 2011
- Fabrika Tedarik Süresi
- 16 Weeks
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Additional Feature
- HIGH RELIABILITY
- Collector Emitter Voltage Vceo
- 50V
- Terminal Sayısı
- 8
- Tepe Reflow Sıcaklığı (°C)
- 260
- Collector Base Voltage Vcbo
- 100V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Parça Durumu
- Active
- Transistor Type
- 2 NPN (Dual)
- Montaj
- Surface Mount
- Vce Saturation Max Ib Ic
- 320mV @ 200mA, 4A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Collectoremitter Breakdown Voltage
- 50V
- Power Max
- 1.7W
- Number Of Elements
- 2
- Transistor Element Material
- SILICON
- Frequency Transition
- 100MHz
- Terminal Kaplaması
- Nickel/Palladium/Gold (Ni/Pd/Au)
- Montaj Tipi
- Surface Mount
- Emitter Base Voltage Vebo
- 7V
- Pin Sayısı
- 8
- Reach Svhc
- No SVHC
- Collectoremitter Saturation Voltage
- 270mV
- Kılıf / Paket
- 8-VDFN Exposed Pad
- Max Breakdown Voltage
- 50V
- Element Configuration
- Dual
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 2.45W
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