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ZXTC6718MCTA

Diodes Incorporated

ZXTC6718MCTA

Arrays BJT Transistors

RoHS: Compliant

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Specifications

Element Configuration
Dual
Tepe Reflow Süresi (maks. sn)
40
Power Dissipation
3W
Max Breakdown Voltage
20V
Kılıf / Paket
8-WDFN Exposed Pad
Collectoremitter Saturation Voltage
-225mV
Reach Svhc
No SVHC
Current Collector Cutoff Max
100nA
JESD-609 Kodu
e4
Case Connection
COLLECTOR
Transition Frequency
140MHz
Pin Sayısı
8
Max Collector Current
3.5A
Frequency Transition
140MHz 180MHz
Currentcollector Ic Max
4.5A 3.5A
Number Of Elements
2
Transistor Element Material
SILICON
Pin Sayısı
8
Temel Parça No
ZXTC6718MC
Montaj Tipi
Surface Mount
Emitter Base Voltage Vebo
-7V
Terminal Kaplaması
Nickel/Palladium/Gold (Ni/Pd/Au)
Transistor Type
NPN, PNP
Montaj
Surface Mount
Parça Durumu
Active
Collector Base Voltage Vcbo
-25V
Çalışma Sıcaklığı
-55°C~150°C TJ
Terminal Sayısı
8
Collector Emitter Voltage Vceo
20V
Tepe Reflow Sıcaklığı (°C)
260
Collectoremitter Breakdown Voltage
20V
Nem Hassasiyeti (MSL)
1 (Unlimited)
Vce Saturation Max Ib Ic
300mV @ 125mA, 4.5A / 300mV @ 350mA, 3.5A
Polarity
NPN, PNP
Gain Bandwidth Product
180MHz
Max Power Dissipation
1.7W
Dc Current Gain Hfe Min Ic Vce
200 @ 2A 2V / 150 @ 2A 2V
Radyasyon Dayanımı
No
Frekans
140MHz
Additional Feature
HIGH RELIABILITY

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