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RoHS
Compliant
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Technical team support
Specifications
- Number Of Elements
- 2
- Temel Parça No
- ZXT12N50D
- Terminal Kaplaması
- Matte Tin (Sn)
- Yükseklik
- 950μm
- Genişlik
- 3.1mm
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Max Breakdown Voltage
- 50V
- JESD-609 Kodu
- e3
- Transition Frequency
- 132MHz
- Pin Sayısı
- 8
- Max Collector Current
- 3A
- Max Power Dissipation
- 1.25W
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1A 2V
- Radyasyon Dayanımı
- No
- Frekans
- 132MHz
- Akım Değeri
- 3A
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 15 Weeks
- Transistor Application
- SWITCHING
- Transistor Type
- 2 NPN (Dual)
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Uzunluk
- 3.1mm
- Voltage Rated Dc
- 50V
- Collectoremitter Breakdown Voltage
- 50V
- Vce Saturation Max Ib Ic
- 250mV @ 50mA, 3A
- Terminal Formu
- GULL WING
- Transistor Element Material
- SILICON
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Emitter Base Voltage Vebo
- 7.5V
- Element Configuration
- Dual
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 1.25W
- Collectoremitter Saturation Voltage
- 135mV
- Current Collector Cutoff Max
- 100nA
- Polarity
- NPN
- Gain Bandwidth Product
- 132MHz
- Continuous Collector Current
- 3A
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