Request a quote for pricing
Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Pin Sayısı
- 8
- Max Collector Current
- 3.5A
- Transition Frequency
- 112MHz
- JESD-609 Kodu
- e3
- Genişlik
- 3.1mm
- Max Breakdown Voltage
- 20V
- Kılıf / Paket
- 8-TSSOP, 8-MSOP (0.118, 3.00mm Width)
- Yükseklik
- 950μm
- Terminal Kaplaması
- Matte Tin (Sn)
- Temel Parça No
- ZXT12N20D
- Number Of Elements
- 2
- Vce Saturation Max Ib Ic
- 200mV @ 50mA, 3.5A
- Terminal Formu
- GULL WING
- Voltage Rated Dc
- 20V
- Collectoremitter Breakdown Voltage
- 20V
- Uzunluk
- 3.1mm
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Transistor Type
- 2 NPN (Dual)
- Montaj
- Surface Mount
- Transistor Application
- SWITCHING
- Kurşunsuz Kodu
- yes
- ECCN Kodu
- EAR99
- Fabrika Tedarik Süresi
- 15 Weeks
- Akım Değeri
- 3.5A
- Frekans
- 112MHz
- Max Power Dissipation
- 1.25W
- Dc Current Gain Hfe Min Ic Vce
- 300 @ 1A 2V
- Radyasyon Dayanımı
- No
- Current Collector Cutoff Max
- 100nA
- Collectoremitter Saturation Voltage
- 160mV
- Element Configuration
- Dual
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 1.25W
- Montaj Tipi
- Surface Mount
- Emitter Base Voltage Vebo
- 7.5V
- Pin Sayısı
- 8
- Transistor Element Material
- SILICON
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Power Max
- 1.04W
- Collector Emitter Voltage Vceo
- 20V
Related Products
Echelon Corporation
15400R-57B
Arrays BJT Transistors
Echelon Corporation
15401R-47BP
Arrays BJT Transistors
Echelon Corporation
15402R-47B
Arrays BJT Transistors
Central Semiconductor Corp
2N2060
Arrays BJT Transistors
Central Semiconductor Corp
2N2060A
Arrays BJT Transistors
Microsemi Corporation
2N2060L
Arrays BJT Transistors
Central Semiconductor Corp
2N2060M
Arrays BJT Transistors
Seme LAB
2N2223
Arrays BJT Transistors