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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Yayın Yılı
- 2006
- Vgsth Max Id
- 1V @ 250μA
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Reel (TR)
- Input Capacitance Ciss Max Vds
- 630pF @ 15V
- Gate To Source Voltage Vgs
- 20V
- Drain To Source Voltage Vdss
- 30V
- Fet Feature
- Standard
- Drain Currentmax Abs Id
- 3.4A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Direnç
- 70mOhm
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 8
- Weight
- 73.992255mg
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Power Dissipation
- 2.1W
- Tepe Reflow Süresi (maks. sn)
- 40
- Akım Değeri
- -4.4A
- Fabrika Tedarik Süresi
- 12 Weeks
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 4.4A Ta
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 8.28nC @ 5V
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 2.1W
- Uzunluk
- 5mm
- Rise Time
- 2.87ns
- Continuous Drain Current Id
- 4.4A
- Voltage Rated Dc
- -30V
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Kaplaması
- Matte Tin (Sn)
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