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Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Type
- 2 N-Channel (Dual)
- Turn On Delay Time
- 3.8 ns
- Number Of Elements
- 2
- Yükseklik
- 1.5mm
- Terminal Kaplaması
- Matte Tin (Sn)
- Genişlik
- 4mm
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fall Time Typ
- 10.6 ns
- Reach Svhc
- No SVHC
- Number Of Channels
- 2
- Rds On Max Id Vgs
- 50m Ω @ 3.6A, 10V
- JESD-609 Kodu
- e3
- Turn Off Delay Time
- 26.2 ns
- Pin Sayısı
- 8
- Gate Charge Qg Max Vgs
- 20.4nC @ 10V
- Operating Mode
- ENHANCEMENT MODE
- Max Power Dissipation
- 2.1W
- Radyasyon Dayanımı
- No
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Fabrika Tedarik Süresi
- 17 Weeks
- Akım Değeri
- 4.7A
- Current Continuous Drain Id25
- 3.8A
- Transistor Application
- SWITCHING
- Montaj
- Surface Mount
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Continuous Drain Current Id
- 5A
- Uzunluk
- 5mm
- Rise Time
- 4ns
- Terminal Formu
- GULL WING
- Voltage Rated Dc
- 60V
- Transistor Element Material
- SILICON
- Pin Sayısı
- 8
- Montaj Tipi
- Surface Mount
- Tepe Reflow Süresi (maks. sn)
- 40
- Power Dissipation
- 2.1W
- Gate To Source Voltage Vgs
- 20V
- Input Capacitance Ciss Max Vds
- 1063pF @ 30V
- Vgsth Max Id
- 1V @ 250μA (Min)
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