ZXMN6A11DN8TC

Specifications

Transistor Element Material

SILICON

Drainsource On Resistancemax

0.14Ohm

Montaj Tipi

Surface Mount

Pin Sayısı

8

Power Dissipation

1.25W

Tepe Reflow Süresi (maks. sn)

40

Input Capacitance Ciss Max Vds

330pF @ 40V

Gate To Source Voltage Vgs

20V

Kurşunsuz

Lead Free

RoHS Durumu

RoHS Compliant

Ambalaj

Tape & Reel (TR)

Vgsth Max Id

1V @ 250μA (Min)

Yayın Yılı

2002

Tepe Reflow Sıcaklığı (°C)

260

Terminal Sayısı

8

Weight

73.992255mg

Parça Durumu

Obsolete

Nem Hassasiyeti (MSL)

1 (Unlimited)

Drain To Source Breakdown Voltage

60V

Power Max

1.8W

Fet Feature

Logic Level Gate

Number Of Elements

2

Turn On Delay Time

1.95 ns

Fet Type

2 N-Channel (Dual)

Terminal Kaplaması

MATTE TIN

Yükseklik

1.5mm

Rds On Max Id Vgs

120m Ω @ 2.5A, 10V

Number Of Channels

2

Fall Time Typ

3.5 ns

Kılıf / Paket

8-SOIC (0.154, 3.90mm Width)

Genişlik

4mm

Pin Sayısı

8

Turn Off Delay Time

8.2 ns

JESD-609 Kodu

e3

Max Power Dissipation

1.25W

Operating Mode

ENHANCEMENT MODE

Qualification Status

Not Qualified

Gate Charge Qg Max Vgs

5.7nC @ 10V

Transistor Application

SWITCHING

Akım Değeri

2.7A