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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Power Max
- 1.8W
- Fet Feature
- Logic Level Gate
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 60V
- Direnç
- 120mOhm
- Parça Durumu
- Active
- Tepe Reflow Sıcaklığı (°C)
- 260
- Terminal Sayısı
- 8
- Weight
- 73.992255mg
- Vgsth Max Id
- 1V @ 250μA (Min)
- Yayın Yılı
- 2006
- Kurşunsuz
- Lead Free
- RoHS Durumu
- ROHS3 Compliant
- Ambalaj
- Tape & Reel (TR)
- Input Capacitance Ciss Max Vds
- 330pF @ 40V
- Gate To Source Voltage Vgs
- 20V
- Power Dissipation
- 2.1W
- Tepe Reflow Süresi (maks. sn)
- 40
- Pin Sayısı
- 8
- Threshold Voltage
- 1V
- Montaj Tipi
- Surface Mount
- Transistor Element Material
- SILICON
- Rise Time
- 3.5ns
- Uzunluk
- 5mm
- Continuous Drain Current Id
- 3.2A
- Voltage Rated Dc
- 60V
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Akım Değeri
- 2.7A
- Fabrika Tedarik Süresi
- 17 Weeks
- ECCN Kodu
- EAR99
- Kurşunsuz Kodu
- yes
- Transistor Application
- SWITCHING
- Current Continuous Drain Id25
- 2.5A
- Operating Mode
- ENHANCEMENT MODE
- Gate Charge Qg Max Vgs
- 5.7nC @ 10V
- Radyasyon Dayanımı
- No
- Max Power Dissipation
- 2.1W
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