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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Transistor Element Material
- SILICON
- Turn On Delay Time
- 4.9 ns
- Number Of Elements
- 2
- Fet Type
- 2 N-Channel (Dual)
- Montaj Tipi
- Surface Mount
- Drainsource On Resistancemax
- 0.045Ohm
- Terminal Kaplaması
- MATTE TIN
- Pin Sayısı
- 8
- Rds On Max Id Vgs
- 40m Ω @ 8.2A, 10V
- Number Of Channels
- 2
- Power Dissipation
- 1.25W
- Fall Time Typ
- 5 ns
- Tepe Reflow Süresi (maks. sn)
- 40
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Pin Sayısı
- 8
- Turn Off Delay Time
- 25.3 ns
- JESD-609 Kodu
- e3
- Max Power Dissipation
- 1.25W
- Operating Mode
- ENHANCEMENT MODE
- Input Capacitance Ciss Max Vds
- 1407pF @ 40V
- Gate Charge Qg Max Vgs
- 24.2nC @ 5V
- Gate To Source Voltage Vgs
- 20V
- Qualification Status
- Not Qualified
- Kurşunsuz
- Lead Free
- Transistor Application
- SWITCHING
- RoHS Durumu
- RoHS Compliant
- Ambalaj
- Tape & Reel (TR)
- Akım Değeri
- 4.4A
- ECCN Kodu
- EAR99
- Vgsth Max Id
- 3V @ 250μA
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Tepe Reflow Sıcaklığı (°C)
- 260
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Terminal Sayısı
- 8
- Weight
- 73.992255mg
- Montaj
- Surface Mount
- Parça Durumu
- Obsolete
- Drain Currentmax Abs Id
- 3.9A
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Drain To Source Breakdown Voltage
- 60V
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