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Support
Technical team support
Specifications
- Gate Charge Qg Max Vgs
- 12.9nC @ 10V
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Element Configuration
- Dual
- Terminal Sayısı
- 8
- Operating Mode
- ENHANCEMENT MODE
- Uzunluk
- 5mm
- Input Capacitance Ciss Max Vds
- 608pF @ 15V
- Yükseklik
- 1.5mm
- Genişlik
- 4mm
- Kurşunsuz
- Lead Free
- Vgsth Max Id
- 3V @ 250μA
- Number Of Channels
- 2
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Kurşunsuz Kodu
- yes
- Turn Off Delay Time
- 16 ns
- Direnç
- 24mOhm
- Radyasyon Dayanımı
- No
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Turn On Delay Time
- 2.9 ns
- Parça Durumu
- Active
- Fabrika Tedarik Süresi
- 17 Weeks
- Rise Time
- 3.3ns
- Weight
- 73.992255mg
- Current Continuous Drain Id25
- 5.7A
- Fall Time Typ
- 8 ns
- Transistor Element Material
- SILICON
- Max Power Dissipation
- 1.8W
- Transistor Application
- SWITCHING
- Terminal Kaplaması
- Matte Tin (Sn)
- Gate To Source Voltage Vgs
- 20V
- Çalışma Sıcaklığı
- -55°C~150°C TJ
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fet Type
- 2 N-Channel (Dual)
- Drain To Source Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Fet Feature
- Logic Level Gate
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