ZXMN3AMCTA

Specifications

Element Configuration

Dual

Fall Time Typ

2.9 ns

Fabrika Tedarik Süresi

36 Weeks

Gate Charge Qg Max Vgs

2.3nC @ 4.5V

Rise Time

2.3ns

Current Continuous Drain Id25

3.7A Ta

Pin Sayısı

8

Number Of Elements

2

Turn On Delay Time

1.7 ns

Parça Durumu

Obsolete

Kılıf / Paket

8-VDFN Exposed Pad

Fet Type

2 N-Channel (Dual)

Vgsth Max Id

3V @ 250μA

Pulsed Drain Currentmax Idm

13A

Input Capacitance Ciss Max Vds

190pF @ 25V

Gate To Source Voltage Vgs

20V

Çalışma Sıcaklığı

-55°C~150°C TJ

Kurşunsuz

Lead Free

Transistor Element Material

SILICON

Terminal Sayısı

8

Operating Mode

ENHANCEMENT MODE

Transistor Application

SWITCHING

Max Power Dissipation

1.7W

Terminal Kaplaması

Nickel/Palladium/Gold (Ni/Pd/Au)

Montaj

Surface Mount

Additional Feature

HIGH RELIABILITY

Continuous Drain Current Id

3.7A

Fet Feature

Standard

Case Connection

DRAIN

Power Dissipation

2.45W

JESD-609 Kodu

e4

Pin Sayısı

8

Nem Hassasiyeti (MSL)

1 (Unlimited)

Seri

Automotive, AEC-Q101

Drain To Source Breakdown Voltage

30V

Rds On Max Id Vgs

120m Ω @ 2.5A, 10V

Radyasyon Dayanımı

No

Fet Technology

METAL-OXIDE SEMICONDUCTOR

ECCN Kodu

EAR99

Tepe Reflow Sıcaklığı (°C)

260