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Priced by quantity and lead time.
Shipping
Same-day dispatch from stock
Genuine parts
Verified sourcing
RoHS
Compliant
Support
Technical team support
Specifications
- Fet Technology
- METAL-OXIDE SEMICONDUCTOR
- Turn Off Delay Time
- 21.6 ns
- Terminal Formu
- GULL WING
- Montaj
- Surface Mount
- Number Of Channels
- 2
- Pin Sayısı
- 8
- Nem Hassasiyeti (MSL)
- 1 (Unlimited)
- Vgsth Max Id
- 1V @ 250μA (Min)
- Terminal Sayısı
- 8
- Uzunluk
- 5mm
- Operating Mode
- ENHANCEMENT MODE
- Genişlik
- 4mm
- Voltage Rated Dc
- 30V
- Kurşunsuz
- Lead Free
- Input Capacitance Ciss Max Vds
- 796pF @ 25V
- Yükseklik
- 1.5mm
- Power Max
- 1.8W
- Pin Sayısı
- 8
- Number Of Elements
- 2
- Gate Charge Qg Max Vgs
- 17.5nC @ 10V
- ECCN Kodu
- EAR99
- Rds On Max Id Vgs
- 35m Ω @ 9A, 10V
- Ambalaj
- Tape & Reel (TR)
- Yayın Yılı
- 2002
- Tepe Reflow Süresi (maks. sn)
- 40
- Montaj Tipi
- Surface Mount
- Tepe Reflow Sıcaklığı (°C)
- 260
- Drainsource On Resistancemax
- 0.035Ohm
- RoHS Durumu
- RoHS Compliant
- Power Dissipation
- 1.25W
- Fet Feature
- Logic Level Gate
- Continuous Drain Current Id
- 4.9A
- Drain To Source Breakdown Voltage
- 30V
- JESD-609 Kodu
- e3
- Akım Değeri
- 4.8A
- Kılıf / Paket
- 8-SOIC (0.154, 3.90mm Width)
- Fet Type
- 2 N-Channel (Dual)
- Transistor Application
- SWITCHING
- Max Power Dissipation
- 1.25W
- Terminal Kaplaması
- MATTE TIN
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